Reticle, apparatus for monitoring optical system, method for monitoring optical system, and method for manufacturing reticle

ABSTRACT

A reticle has a mask substrate, a test pattern established on the mask substrate having an asymmetrical diffraction grating so as to generate positive first order diffracting light and negative first order diffracting light in different diffraction efficiencies, and a device pattern adjacent to the test pattern established on the mask substrate.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromprior Japanese Patent Application P2003-199178 filed on Jul. 18, 2003;the entire contents of which are incorporated by reference herein.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to photolithographic projection and inparticular to a reticle, an apparatus for monitoring optical system, amethod for monitoring optical system, and a method for manufacturing thereticle.

2. Description of the Related Art

Since photolithography patterns formed on a semiconductor wafer arecontinually becoming increasingly fine and precise, it becomes moreimportant to arrange precisely the wafer in the focal point. Defocuscaused by wrong arrangement of the wafer brings defective products.Therefore, methods for arranging the wafer in the focal point correctlyhave been developed. For example, asymmetrical diffracting gratings areemployed. The asymmetrical diffracting gratings have asymmetricaldiffracting portions, which generate phase different of light reachingvalue that is larger than 0 degrees and lower than 180 degrees. Suchasymmetrical diffracting gratings generate a positive first orderdiffracting light and a negative first order diffracting light indifferent diffracting efficiencies. When the asymmetrical diffractinggratings are exposed with laser light, projection images on the wafer ofthe asymmetrical diffracting gratings shift perpendicularly to theoptical axis if the wafer is shifted in the direction of the opticalaxis. The shift of the projection images and the shift of the wafer havelinear relation. Therefore, once the linear relation is obtained, it ispossible to calculate the wafer position from measured position of theprojection images. However, existing method requires preparing tworeticles, one for the inspection of the wafer position, and another forexposing the device pattern on the wafer. This is because it isdifficult to fabricate both the asymmetrical diffracting gratings andthe device pattern on single substrate. Therefore, preparing tworeticles leads the development cost to high, and exchanging the reticlesinterrupts continuous production. Further, defocus may be caused whilethe reticles are exchanged.

SUMMARY OF THE INVENTION

An aspect of present invention inheres in a reticle according to anembodiment of the present invention having a mask substrate, a testpattern established on the mask substrate having an asymmetricaldiffraction grating so as to generate positive first order diffractinglight and negative first order diffracting light in differentdiffraction efficiencies, and a device pattern adjacent to the testpattern established on the mask substrate.

Another aspect of the present invention inheres in an apparatus formonitoring an optical system according to the embodiment of the presentinvention having a projection image information extractor configured toobtain image information of a projection image by positive first orderdiffracting light and negative first order diffracting light indifferent diffraction efficiencies, an optical information memoryconfigured to store the image information, and a calibration informationprovider configured to provide calibration information by using theimage information so as to calibrate the optical system.

Yet another aspect of the present invention inheres in a computerimplemented method for monitoring an optical system according to theembodiment of the present invention having obtaining image informationof a projection image by positive first order diffracting light andnegative first order diffracting light in different diffractionefficiencies, and providing calibration information by using the imageinformation so as to calibrate the optical system.

Yet another aspect of the present invention inheres in a method formanufacturing a reticle according to the embodiment of the presentinvention including depositing a light shielding film on a masksubstrate, coating a first resist film on the light shielding film anddelineating first openings in the first resist film, etching the lightshielding film exhibited by the first openings selectively, removing thefirst resist film and coating a second resist film on the mask substrateand delineating second openings in the second resist film, etching themask substrate exhibited by the second openings selectively andfabricating a plurality of asymmetrical diffracting portions thatgenerate positive first order diffracting light and negative first orderdiffracting light in different diffraction efficiencies, removing thesecond resist film and coating a third resist film on the mask substrateand delineating the third openings in the third resist film, and etchingthe mask substrate exhibited by the third openings selectively andfabricating a plurality of symmetrical diffracting portions thatgenerate positive first order diffracting light and negative first orderdiffracting light in equal diffraction efficiencies.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is an exploded perspective view of a reduction projectionexposure device in accordance with an embodiment of the presentinvention;

FIG. 2 is a plan view of a reticle in accordance with the embodiment ofthe present invention;

FIG. 3 is a plan view of a test pattern of the reticle in accordancewith the embodiment of the present invention;

FIG. 4 is a plan view of an asymmetrical diffraction grating of the testpattern in accordance with the embodiment of the present invention;

FIG. 5 is a sectional view of the asymmetrical diffraction grating inaccordance with the embodiment of the present invention;

FIG. 6 is a sectional view of a device pattern of the reticle inaccordance with the embodiment of the present invention;

FIG. 7 is a sample graph of distribution of light intensity on surfaceof pupil in accordance with the embodiment of the present invention;

FIG. 8 is a sample graph of optical axis intersecting point versusrelative distance of projection image positions in accordance with theembodiment of the present invention;

FIG. 9 is a block diagram of an apparatus for monitoring optical systemin accordance with the embodiment of the present invention;

FIG. 10 is a first flowchart depicting a method for monitoring anoptical system in accordance with the embodiment of the presentinvention;

FIG. 11 is a second flowchart depicting a method for monitoring theoptical system in accordance with the embodiment of the presentinvention;

FIG. 12 is a plan view of a first modification of the test pattern inaccordance with the embodiment of the present invention;

FIG. 13 is a plan view of a second modification of the test pattern inaccordance with the embodiment of the present invention;

FIG. 14 is a plan view of a third modification of the test pattern inaccordance with the embodiment of the present invention;

FIG. 15 is a first sectional view of the reticle depicting themanufacturing process in accordance with the embodiment of the presentinvention;

FIG. 16 is a second sectional view of the reticle depicting themanufacturing process in accordance with the embodiment of the presentinvention;

FIG. 17 is a third sectional view of the reticle depicting themanufacturing process in accordance with the embodiment of the presentinvention;

FIG. 18 is a fourth sectional view of the reticle depicting themanufacturing process in accordance with the embodiment of the presentinvention;

FIG. 19 is a fifth sectional view of the reticle depicting themanufacturing process in accordance with the embodiment of the presentinvention;

FIG. 20 is a sixth sectional view of the reticle depicting themanufacturing process in accordance with the embodiment of the presentinvention;

FIG. 21 is a seventh sectional view of the reticle depicting themanufacturing process in accordance with the embodiment of the presentinvention;

FIG. 22 is a eighth sectional view of the reticle depicting themanufacturing process in accordance with the embodiment of the presentinvention;

FIG. 23 is a sectional view of a reticle in accordance with a firstmodification of the embodiment of the present invention;

FIG. 24 is a first sectional view of the reticle depicting. themanufacturing process in accordance with the first modification of theembodiment of the present invention;

FIG. 25 is a second sectional view of the reticle depicting themanufacturing process in accordance with the first modification of theembodiment of the present invention;

FIG. 26 is a third sectional view of the reticle depicting themanufacturing process in accordance with the first modification of theembodiment of the present invention;

FIG. 27 is a fourth sectional view of the reticle depicting themanufacturing process in accordance with the first modification of theembodiment of the present invention;

FIG. 28 is a fifth sectional view of the reticle depicting themanufacturing process in accordance with the first modification of theembodiment of the present invention;

FIG. 29 is a sixth sectional view of the reticle depicting themanufacturing process in accordance with the first modification of theembodiment of the present invention;

FIG. 30 is a sectional view of a reticle in accordance with a secondmodification of the embodiment of the present invention;

FIG. 31 is a first sectional view of the reticle depicting themanufacturing process in accordance with the second modification of theembodiment of the present invention;

FIG. 32 is a second sectional view of the reticle depicting themanufacturing process in accordance with the second modification of theembodiment of the present invention;

FIG. 33 is a third sectional view of the reticle depicting themanufacturing process in accordance with the second modification of theembodiment of the present invention;

FIG. 34 is a fourth sectional view of the reticle depicting themanufacturing process in accordance with the second modification of theembodiment of the present invention;

FIG. 35 is a fifth sectional view of the reticle depicting themanufacturing process in accordance with the second modification of theembodiment of the present invention;

FIG. 36 is an exploded perspective view of a reduction projectionexposure device in accordance with a third modification of theembodiment of the present invention;

FIG. 37 is a plan view of an asymmetrical diffraction grating of thetest pattern in accordance with a fourth modification of the embodimentof the present invention;

FIG. 38 is a sectional view of the asymmetrical diffraction grating inaccordance with the fourth modification of the embodiment of the presentinvention;

FIG. 39 is a plan view of a projected image of the asymmetricaldiffraction grating in accordance with the fourth modification of theembodiment of the present invention;

FIG. 40 is a first sample graph of optical-axis-intersecting pointversus line width in accordance with the fourth modification of theembodiment of the present invention;

FIG. 41 is a second sample graph of optical-axis-intersecting pointversus line width in accordance with the fourth modification of theembodiment of the present invention;

FIG. 42 is a block diagram of an apparatus for monitoring optical systemin accordance with the fourth modification of the embodiment of thepresent invention; and

FIG. 43 is a flowchart depicting a method for monitoring the opticalsystem in accordance with the fourth modification of the embodiment ofthe present invention.

DETAILED DESCRIPTION OF THE INVENTION

Various embodiments of the present invention will be described withreference to the accompanying drawings. It is to be noted that the sameor similar reference numerals are applied to the same or similar partsand elements throughout the drawings, and the description of the same orsimilar parts and elements will be omitted or simplified.

The reduction projection exposure device according to an embodiment ofthe present invention includes an optical system 140 and a wafer stage32, as shown in FIG. 1. The optical system 140 includes an illuminationsource 41, a condenser lens 43 disposed under the illumination source41, and a projection optical system 42 disposed under the condenser lens43. A reticle 5 that includes a device pattern 15, a plurality ofalignment marks 26 a, 26 b, 26 c, and a plurality of test patterns 20 a,20 b, 20 c is disposed in between the condenser lens 43 and theprojection optical system 42. The device pattern 15 takes in the lightbeamed from the illumination source 41 and subsequently focused by thecondenser lens 43. A wafer 31 is disposed above the wafer stage 32. Thelight diffracted at the device pattern 15 and each of the test patterns20 a, 20 b, 20 c is condensed at the projection optical system 42 andimaged on the wafer 31.

As depicted by the enlarged plan view shown in FIG. 2, the reticle 5includes a mask substrate 1, a plurality of test patterns 20 a, 20 b, 20c established on the mask substrate 1 having an asymmetrical diffractiongrating so as to generate positive first order diffracting light andnegative first order diffracting light in different diffractionefficiencies, and a plurality device patterns 15 a, 15 b, 15 c adjacentto the test patterns 20 a-20 c established on the mask substrate 1.

The mask 1 is transparent, and is composed of a substance such as fusedsilica glass. A light shielding film 17 is disposed on the masksubstrate 1, and a plurality of test pattern windows 56 a, 56 b, 56 care established on the light shielding film 17. The light shielding film17 is composed of a substance such as chromium (Cr). The test patterns20 a, 20 b, 20 c provide asymmetrical diffraction gratings 222 a, 222 b,222 c that are established on the mask substrate 1 and exhibited by thetest pattern windows 56 a, 56 b, 56 c. The reticle 5 also includesalignment marks 26 a, 26 b, 26 c established on the mask substrate 1,each of the alignment marks 26 a, 26 b, 26 c situated adjacent to one ofthe test patterns 20 a, 20 b, 20 c. The test patterns 20 a-20 c and thealignment marks 26 a-26 c are disposed on the inside of exposed area,and specifically on the inside of dicing line of the mask. The reticle 5also includes a device pattern window 57 established on the lightshielding film 17, and the device patterns 15 a, 15 b, 15 c areexhibited by the device pattern window 57. Further, the alignment marks26 a, 26 b, 26 c are used for the positioning alignment of the wafer 31shown in FIG. 1.

FIG. 3 is an example enlarged plan view of the test pattern 20 a shownin FIG. 2. The test pattern 20 a includes asymmetrical diffractiongratings 22 a, 22 b, 22 c, 22 d, and light shielding patterns 61 a, 61b, 61 c, 61 d that are disposed parallel to each of the asymmetricaldiffraction gratings 22 a, 22 b, 22 c, 22 d. The asymmetricaldiffraction gratings 22 a, 22 b, 22 c, 22 d are disposed forming foursides of a square on the surface of the mask substrate 1. Each of theasymmetrical diffraction gratings 22 a, 22 b, 22 c, 22 d generates apositive first order diffracted light and a negative first orderdiffracted light in different diffraction efficiency. The asymmetricaldiffraction gratings 22 a, 22 b, 22 c, 22 d together as a group form theasymmetrical diffraction grating 222 a shown in FIG. 2. Further, thetest patterns 20 b, 20 c possess the same constitution as the testpattern 20 a shown in the enlarged plan view of FIG. 3.

FIG. 4 is a plan view enlarging a part of the asymmetrical diffractiongrating 22 a shown in FIG. 3, and FIG. 5 is a cross sectional view ofthe asymmetrical diffraction grating 22 a shown in FIG. 4 cut from thedirection of the I-I line. As shown in FIGS. 4 and 5, the asymmetricaldiffraction grating 22 a of the test pattern 20 a includes a lightshielding band 70 a, and an asymmetrical diffracting portion 13 a thatis established on the mask substrate situated adjacent to one side ofthe light shielding band 70 a. The light shielding band 70 a is disposedon the surface of the mask substrate 1 and is composed of a materialsuch as chrome (Cr). The group made of the light shielding band 70 a andthe asymmetrical diffracting portions 13 a paired together forms thesmallest unit of the repeating pattern of the asymmetrical diffractiongrating 22 a, and the other light shielding bands 70 b, 70 c, . . . andthe asymmetrical diffracting portions 13 b, 13 c . . . are allestablished on the mask substrate 1 in the same repeating pattern. Eachconstitution of the asymmetrical diffraction gratings 22 b through 22 dis similar to the asymmetrical diffraction grating 22 a shown in FIGS. 4and 5.

The ratio of the widths of the light shielding band 70 a to the adjacentasymmetrical diffracting portion 13 a is 2:1. The repeating patternproviding the light shielding band 70 b and the adjacent asymmetricaldiffracting portion 13 b is established at periods of the same width ofthe asymmetrical diffracting portion 13 a. For instance, on thereduction projection exposure device shown in FIG. 1, when irradiatingan argon fluoride (ArF) excimer laser having a wavelength of 193 nm fromthe illumination source 41 onto the reticle 5, it is acceptable to givethe light shielding band 70 a a width of 0.2 μm, and give both the asymmetrical diffracting portion 13 a and the period in between the lightshielding band 70 a and the asymmetrical diffracting portion 13 b widthsof 0.1 μm. The proportion of the widths of the other light shieldingbands 70 b, 70 c, . . . , the asymmetrical diffracting portions 13 b, 13c, . . . and the periods establishing the repeating pattern areestablished in the same manner as described above. The asymmetricaldiffracting portions 13 a, 13 b, 13 c, . . . are all groove likestructures established inside of the mask substrate 1 near the topsurface, at a depth where the phase difference of the exposure laserlight transmitted to the surface of the mask substrate 1 is a multipleof 90 degrees. The mask substrate 1 is composed of a substance such asfused silica glass for instance, which possesses a refraction index of1.56. When exposing with an ArF excimer laser from the illuminationsource 41 shown in FIG. 1 for the purpose of generating a 90 degreephase difference, each of the asymmetrical diffracting portions 13 a, 13b, 13 c, . . . has a depth of 86.2 nm.

An example of enlarged sectional view of the device pattern 15 a isshown in FIG. 6. As shown in FIG. 6, the device pattern 15 a includes aplurality of symmetrical diffracting portions 23 a, 23 b, 23 c, . . . ,established on the mask substrate 1, a plurality of light shieldingmasks 7 a, 7 b, 7 c, 7 d, 7 e, 7 f, . . . disposed sandwiching thesymmetrical diffracting portions 23 a, 23 b, 23 c, . . . in the upperregion of the mask substrate 1. The enlarged sectional views of each ofthe other device patterns 15 b, 15 c are omitted since the devicepatterns 15 b, 15 c occur in the same manner as in FIG. 6.

Here, the symmetrical diffracting portions 23 a, 23 b, 23 c, . . . areall groove like structures established inside of the mask substrate 1near the top surface, at a depth where the phase difference of theexposure laser light transmitted to the surface of the mask substrate 1is a multiple of 180 degrees. The mask substrate 1 is composed of asubstance such as fused silica glass for instance, which possesses arefraction index of 1.56. When exposing with an ArF excimer laser fromthe illumination source 41 shown in FIG. 1 for the purpose of generatinga 180 degree phase difference, the symmetrical diffracting portions 23a, 23 b, 23 c, . . . all have a depth of 172.3 nm.

As shown in FIG. 2, the part where each of the test patterns 20 a, 20 b,20 c providing the asymmetrical diffraction gratings 22 a through 22 dshown in FIGS. 4 and 5 and each of the device patterns 15 a, 15 b, 15 cshown in FIG. 6 are both established on the same mask substrate 1 is aone of features of the reticle 5 according to the embodiment of thepresent invention. FIG. 7 shows the results of the computation of thedistribution of light intensity on the surface of the pupil, when thereticle 5 is disposed in a position where the surface having theasymmetrical diffraction gratings 22 a through 22 d established on thesubstrate 1 is facing downward, and is exposed by the ArF excimer laserfrom above. As shown in FIG. 7, the horizontal axis represents theposition within the surface of the pupil, while the vertical axisrepresents the light intensity. When the light intensity is plotted inover the horizontal and vertical axes, it can be seen that a first orderdiffracted light appears on only the positive side in relation to thezero order diffracted light on the pupil location. If each of theasymmetrical diffracting portions 13 a, 13 b, 13 c, . . . shown in FIG.5 is established at a depth that will generate a phase difference of amultiple of value that is larger than 0 degrees and lower than 180degrees on the exposure laser light transmitted to the surface of themask substrate 1, it is possible to generate the positive first orderdiffracted light as well as the negative first order diffracted light ofdiffering diffraction efficiencies. However, if the asymmetricaldiffracting portions 13 a, 13 b, 13 c, . . . are established at a depththat will generate a phase difference of 90 degrees it is possible tobias the diffraction efficiency to the most positive or most negativeside. Another effective way to bias the diffraction efficiency to eitherthe positive or negative sides is to establish the light shielding bands70 a, 70 b, 70 c, . . . , and the asymmetrical diffracting portions 13a, 13 b, 13 c, . . . , having a width ratio of 2:1, as well asestablishing the repeating pattern.at an equal period to that of theasymmetrical diffracting portions 13 a, 13 b, 13 c.

In the case where the reticle 5 includes the asymmetrical diffractiongratings 22 a through 22 d as shown in FIGS. 3 through 5, and when thereticle 5 is exposed with the reduction projection exposure device shownin FIG. 1, the image projected on the wafer 31 by each of theasymmetrical diffraction gratings 22 a through 22 d shiftsperpendicularly to the optical axis when the wafer stage 32 is shiftedin the direction of the optical axis. However, the projected images ofthe light shielding patterns 61 a, 61 b, 61 c, 61 d shown in FIG. 3don't shift perpendicularly in relation to the optical axis even if thewafer stage 32 is shifted in the direction of the optical axis.

The above phenomenon can be demonstrated in theory as well. Forinstance, in a case where a coherent light with a wavelength of λ isincident from the perpendicular direction to an asymmetrical diffractiongrating having a grating period expressed as P and only generating firstorder diffracted lights to the positive side, and the level plane havingthe wafer disposed on it is expressed as x-y, and the optical axisdirection that is directly perpendicular to x-y is expressed as z, theamplitude, expressed as E, of the light projected on the wafer can beexpressed by the following formula (1):E(x, z)=c ₀ +c ₁exp[2πI(x/P+kz−W ₁)]  (1)

Here,k=(1−[1−(λ/P)²]^(1/2))/λ  (2)

W₁ is diffraction phase error according to aberration, and c_(i) isfourier intensity of the i order diffraction.

The light intensity expressed as I of the image projected on the waferis expressed as the absolute value of the afore mentioned E to thesecond power, and is expressed by the following formula (3):$\begin{matrix}\begin{matrix}{{I\left( {x,z} \right)} = {{E\left( {x,z} \right)}}^{2}} \\{= {c_{0}^{2} + c_{1}^{2} + {2c_{0}c_{1}\quad{\cos\quad\left\lbrack {2\quad{\pi\left( {{x/P} + {kz} - W_{1}} \right)}} \right\rbrack}}}}\end{matrix} & (3)\end{matrix}$

Here, in order to obtain bright lines (bright fringes), cos [2π(x/P+kz−W₁)] in the formula (2) must become 1. Therefore,x/P+kz−W ₁=0  (4)

When the (4) formula is differentiated by z, the formula (5) below isattained.dx/dz=−kP  (5)

With the above, it can be seen that the amount of shift (dx) of theprojection image from the asymmetrical diffraction grating, and theamount of shift (dz) of the wafer in the optical axis direction have aproportionate relationship.

With the reduction projection exposure device shown in FIG. 1, the wafer31, which is a silicon substrate coated with photoresist, is situated onthe wafer stage 32. The wafer 31 is gradually moved toward the opticalaxis, and after a number of wafers 31 have been exposed at a number ofoptical-axis-intersecting points, the photoresist on the wafer 31 is wetetched with a developer. The change in the relative distances of theprojection image positions of both the asymmetrical diffraction grating22 a and the light shielding pattern 61 a is then observed under ascanning electron microscope (SEM), an atomic force microscope (AFM) orthe like.

The results are shown in the graph of FIG. 8, where the horizontal axisrepresents the optical-axis-intersecting points on the surface of thewafer 31, and the vertical axis represents the relative distance of theprojection image positions. A relationship can be seen when the wafer 31is shifted 100 nm the relative distance undergoes an approximate changeof 25 nm. The same applies to the relative distance of the projectionimage positions of the other asymmetrical diffraction grating 22 b andlight shielding pattern 61 b, the asymmetrical diffraction grating 22 cand light shielding pattern 61 c, and the asymmetrical diffractiongrating 22 d and light shielding pattern 61 d as well.

Therefore, it is possible to calculate the approximate formula (a linearfunction formula) that expresses the relation between the relativedistance of the projection image positions and theoptical-axis-intersecting points on the surface of the wafer 31.Consequently, the optical axis intersecting points of the wafer 31 canbe derived by substituting the actual measured values of the relativedistance of the projection image positions into the calculatedapproximate formula.

Again, in an instance where the reticle 5 providing the test pattern 20a shown in FIG. 3 is disposed on the reduction projection exposuredevice shown in FIG. 1, the differences in the focal points of theprojected images of the asymmetrical diffraction grating 22 a and theperpendicularly-adjacent asymmetrical diffraction grating 22 b representthe astigmatism of the optical system 140 of the reduction projectionexposure device shown in FIG. 1. Therefore, if the approximate formulasexpressing the linear relationship between the projection imagepositions of each of the asymmetrical diffraction gratings 22 a and 22 band the optical axis intersecting points of the wafer are calculated,the astigmatic aberration can be derived from the differences in theintercepts of each approximate formula. The same applies to theperpendicularly adjacent asymmetrical diffraction gratings 22 b and 22c, the asymmetrical diffraction gratings 22 c and 22 d, and theasymmetrical diffraction gratings 22 d and 22 a as well.

Next, having acquired the relative distances of. the projection imagepositions of the asymmetrical diffraction gratings 22 a, 22 b, 22 c, 22d and the light shielding patterns 61 a, 61 b, 61 c, 61 d of the testpattern shown in FIG. 3, an apparatus for monitoring optical system soas to derive the aberration and defocus of the optical system 140 of thereduction projection exposure device shown in FIG. 1 will be describedin using FIG. 9. Specifically, the apparatus for monitoring opticalsystem according to the embodiment of the present invention includes acentral processing unit (CPU) 300, an optical information memory 335, aninput device 312, an output device 313, a program memory 330 and atemporary memory 331. Further, the CPU 300 includes a projection imageinformation extractor 325, and an calibration information provider 315.

The projection image information extractor 325 includes an approximateformula calculator 301, and acquires the information of the projectionimages from the asymmetrical diffraction grating 22 a and the lightshielding pattern 61 a on the wafer 31 along with the information of theoptical axis intersecting points of the wafer 31 shown in FIG. 1.Further, the projection image information extractor 325 acquires aplurality of image information at a number of optical axis intersectingpoints. The approximate formula calculator 301 shown in FIG. 9 extractsinformation expressing the relationship between the relative distance ofthe projection image positions of the asymmetrical diffraction grating22 a and the light shielding pattern 61 a shown in FIG. 8, and theoptical axis intersecting points on the surface of the wafer 31.Further, the approximate formula calculator 301 calculates theapproximate formula used to express the relation between the relativedistances of the projection image positions and the optical axisintersecting points. Calculation in the same manner using an approximateformula applies to the projection images from the other asymmetricaldiffraction gratings 22 b, 22 c, 22 d and light shielding patterns 61 b,61 c, 61 d as well.

The optical information memory 335 shown in FIG. 9 includes anapproximate formula storage portion 310 and a focal point storageportion 311. The approximate formula storage portion 310 stores theapproximate formula calculated by the approximate formula calculator301. The focal point storage portion 311 stores the focal point andfocal depth of the optical system 140 in the reduction projectionexposure device shown in FIG. 1. The theoretical values derived from thedesign of the optical system 140 can be stored as the focal point andthe focal depth in the focal point storage portion 311. The range ofoptical axis intersecting points of the wafer 31, that are introduced byallowable resist patter shape on the wafer 31, can also be stored as thefocal point and the focal depth. Such range is determined by previouslyexposing the wafer 31 with a plurality of optical axis intersectingpoints on the device pattern 15 of the reticle 5.

The calibration information provider 315 shown in FIG. 9 includes anaberration calculator 323, a defocus calculator 302, and a defocusjudgment module 303. The aberration calculator 323 compares theplurality of approximate formulas stored by the approximate formulastorage portion 310 and calculates the aberration of the optical system140 of the reduction projection exposure device shown in FIG. 1. Thedefocus calculator 302 shown in FIG. 9 substitutes the relative distanceof the actual measured positions of the projection images from theasymmetrical diffraction gratings 22 a, 22 b, 22 c, 22 d and the lightshielding patterns 61 a, 61 b, 61 c, 61 d on the wafer 31, that areinput by the input device input device 312, into the approximate formulastored in the approximate formula storage portion 310. The defocuscalculator 302 then calculates the calculated position of the wafer 31.The defocus judgment module 303 shown in FIG. 9 compares the calculatedposition of the wafer 31 derived by the defocus calculator 302 with thefocal point stored in the focal point storage portion 311, judgeswhether or not the defocus is within an allowable range, and outputs theresulting decision to the output device 313.

Further, keyboards, mouse pointers and the like can be used as the inputdevice 312, and liquid crystal display devices (LCD), light emittingdiodes (LED) and the like can be used as the output device 313. Theprogram memory 330 stores programs that the CPU 300 needs to govern thetransferring of data from the connected devices and calculateapproximate formula and the defocus. The temporary memory 331temporarily stores the data of the computation processes of the CPU 300.

Next, a method for monitoring the optical system using the reticle 5shown in FIG. 2 and the apparatus for monitoring optical system shown inFIG. 9 will be described. The method for monitoring the optical systemtests whether or not aberration is occurring on the optical system 140of the reduction projection exposure device shown in FIG. 1, or whetheror not the wafer 31 is properly situated on the focal point. First, themethod for monitoring the optical system that calculates the aberrationof the optical system 140 of the reduction projection exposure deviceshown in FIG. 1 will be describes using FIGS. 1, 3, 9, and 10.

(a) In a step S 101 of FIG. 10, the test patterns 20 a, 20 b, 20 c ofthe reticle 5 are projected on the wafer 31 by the reduction projectionexposure device shown in FIG. 1. A plurality of the wafer 31 is preparedand exposed at a plurality of optical axis intersecting points whilegradually moving the wafer stage 32. After developing the wafer 31, theimage information of the images from the asymmetrical diffractiongratings 22 a, 22 b, 22 c, 22 d and the light shielding patterns 61 a,61 b, 61 c, 61 d projected onto the surface of the wafer 31 is input tothe projection image information extractor 325 by the input device 312.

(b) In a step S 151, the approximate formula calculator 301 of theprojection image information extractor 325 extracts the relationship ofthe optical axis intersecting points of the wafer 31 and the relativedistance of the images from the asymmetrical diffraction grating 22 aand the light shielding pattern 61 a projected onto the surface of thewafer 31. Specifically, the approximate formula calculator 301 extractsthe above from a plurality of image information, and subsequentlycalculates an approximate formula. The other approximate formulas aresimilarly calculated for the other asymmetrical diffraction gratings 22bthrough 22 d and light shielding patterns 61 bthrough 61 d as well.

(c) In a step 102 the approximate formula storage portion 310 stores theapproximate formulas computed by the approximate formula calculator 301.In a step S161 the aberration calculator 323 of the calibrationinformation provider 315 reads the plurality of approximate formulasstored in the approximate formula storage portion 310, compares them andthen calculates the aberration of the optical system 140. In a step S103, the calibration information provider 315 transmits the aberrationderived by the calibration information provider 315 to the output device313, thus ending the inspection.

Next, the method for monitoring the optical system that calculates thedefocus of the optical system 140 of the reduction projection exposuredevice shown in FIG. 1 will be describes using FIGS. 1, 3, 9, and 11.

(a) In a step S110 of FIG. 11, the approximate formula calculator 301judges whether or not approximate formulas have already been derived forthe objective reticle and are stored in approximate formula storageportion 310 shown in FIG. 9. If the approximate formulas are not stored,the approximate formula calculator 301 calculates the approximateformulas in the same manner as in the steps S101, S151, S102 appearingin the description of FIG. 10. The calculated approximate formulas arethen stored in the approximate formula storage portion 310, and the testproceeds to a step S162. On the other hand, in the instance where theapproximate formulas are already stored in the approximate formulastorage portion 310, the test proceeds directly to the step S162.

(b) In the step S162 of FIG. 11, the approximate formula stored in theapproximate formula storage portion 310 shown in FIG. 9, and themeasured relative distances of the projection images on the wafer 31inputted from the input device 312 are stored-away by the defocuscalculator 302 shown in FIG. 9. The projection images on the wafer 31shown in FIG. 1 are projected from the asymmetrical diffraction gratings22 a, 22 b, 22 c, 22 d and the light shielding patterns 61 a, 61 b, 61c, 61 d shown in FIG. 3. The defocus calculator 302 substitutes theactual measured values of the relative distances of the actual measuredpositions into the variable of the relative distance in the approximateformula, and then calculates the calculated position of the wafer 31.The calculated position is transmitted to the defocus judgment module303 shown in FIG. 9.

(c) In a step S 163 of FIG. 11, the focal point and focal depth of theoptical system 140 of the reduction projection exposure device shown inFIG. 1 are input to the defocus judgment module 303 shown in FIG. 9. Thedefocus judgment module 303 calculates the defocus from the differenceof the focal point and the calculated position of the wafer 31 derivedat the step S162. The derived defocus is compared to the focal depth,and if for instance the defocus is judged to be within the focal depthrange, it is decided that the correction of the optical system 140 isunnecessary. And if for instance the defocus is judged to be outside ofthe focal depth range, it is decided that it is necessary to move thewafer stage 32 in the direction that will delete the derived defocus.

(d) In a step S103 of FIG. 11, the calibration information provider 315shown in FIG. 9 transmits the judgment results obtained at the step S163of the FIG. 11 to the output device 313, thus ending the test.

As shown above, by employing the reticle 5 shown in FIG. 2, theapparatus for monitoring optical system shown in FIG. 9, and the methodfor monitoring the optical system shown in FIG. 10, it becomes possibleto inspect the aberration of the optical system 140 of the reductionprojection exposure device shown in FIG. 1. Also, by employing themethod for monitoring the optical system shown in FIG. 11, it becomespossible to inspect whether or not the wafer 31 is properly situated onthe focal point on the reduction projection exposure device shown inFIG. 1. Further, in instances where defocus occurs, it is possible toadjust the focus in a short period of time by moving the wafer stage 32in the direction that will delete the calculated defocus. Also, becausethe test pattern equipped testing reticles, and the device patternequipped production reticles are separated conventionally, it isnecessary to exchange the testing reticle for the production reticleafter correcting an optical system with testing reticle. However,because the reticle 5 includes the test patterns 20 a, 20 b, 20 c andthe device patterns 15 a-15 c, it is possible to fabricate thesemiconductor integrated circuit immediately after the correcting theoptical system 140, without having to exchange reticles. Further, it isalso possible to inspect continuously for the occurrence ofabnormalities during the semiconductor integrated circuit manufacturingprocess. In an instance of multiple lot production of semiconductorintegrated circuitry, by observing and comparing the relative distanceof the projection images of the asymmetrical diffraction gratings 22 a,22 b, 22 c, 22 d and the light shielding patterns 61 a, 61 b, 61 c, 61 don the wafer 31 at each lot, it is possible to continuously inspectwhether or not defocus is occurring on the reduction projection exposuredevice. Also, in instances where the defocus has exceeded the allowablerange, by moving the wafer stage 32 in the direction that delete thedefocus with the method for monitoring the optical system shown in FIG.11, it is possible to immediately resume the manufacturing ofsemiconductor integrated circuitry. Therefore, the time that is used toadjust the focal point of the optical system of an exposure device isgreatly reduced in the semiconductor integrated circuit manufacturingprocess, leading to a reduction in production costs.

Further, the test patterns 20 a, 20 b, 20 c of the reticle 5 shown inFIG. 2 are not limited to the arrangement shown in FIG. 3. Establishingthe asymmetrical diffraction grating 122 a that includes theasymmetrical diffracting portions 113 a, 113 b, 113 c, . . . , lightshielding bands 170 a, 170 b, 170 c, . . . and the asymmetricaldiffraction grating 122 b that includes the asymmetrical diffractingportions 213 a, 213 b, 213 c, . . . , light shielding bands 270 a, 270b, 270 c, . . . so as to flow in the opposite direction as shown inFIGS. 12 and 13 is alternative. When a reticle 5 including theasymmetrical diffraction gratings 122 a, 122 b is exposed with thereduction projection exposure device shown in FIG. 1, if the wafer 31 ismoved in direction of the optical axis the projection image positions ofthe asymmetrical diffraction gratings 122 a, 122 b move in a mutuallyopposite direction on the wafer 31. Therefore, it is possible to observethe linear relationship of the projection image positions and theoptical axis intersecting points of the wafer 31 at twice thesensitivity of that of the arrangement in FIG. 3. Also, as shown in FIG.14, it is possible to measure the relative distance of the projectionimage positions of both the asymmetrical diffraction grating 122 a andthe light shielding pattern 62 by disposing the patterns of theasymmetrical diffraction grating 122 a and the light shielding pattern62 so that the longitudinal directions are the same.

Next a method for manufacturing the reticle that includes theasymmetrical diffraction grating 22 a shown in FIG. 5 and the devicepattern 15 a shown in FIG. 6 together on the same mask substrate will bedescribes using FIGS. 15 to 22.

(a) As shown in FIG. 15, a mask substrate 1 made of a substance such asfused silica glass is prepared. Next, a light shielding film 27 made ofa substance such as Chromium is deposited on the surface of the masksubstrate 1 using a process such as vacuum deposition. Further, a firstresist film 8 is coated on the light shielding film 27 with spincoating, and first openings 35 a, 35 b, 35 c, 35 d, 35 e and firstopenings 45 a, 45 b are delineated using the photolithography process.

(b) The parts of the light shielding film 27 exhibited by the firstopenings 35 a, 35 b, 35 c, 35 d, 35 e and first openings 45 a, 45 b areselectively etch away with anisotropic etching until the mask substrateis exhibited, using the first resist film 8 as a mask. Afterward thefirst resist film 8 is removed with using a remover agent, and the lightshielding masks 7 a, 7 b, 7 c, 7 d and light shielding bands 70 a, 70 bare formed on the surface of the mask substrate 1, as shown in FIG. 16.

(c) A second resist film 18 is coated on the mask substrate 1 with spincoater. Afterward, as shown in FIG. 17, second openings 36 a, 36 b andsecond openings 46 a, 46 b are delineated using the photolithographyprocess. The parts of the mask substrate 1 exhibited by the secondopenings 36 a, 36 b and the second openings 46 a, 46 b are selectivelyetched away with the anisotropic etching, using the second resist film 8as a mask, and asymmetrical diffracting portions 131 a, 131 b, 13 a, 13b are delineated as shown in FIG. 18. In this process, the asymmetricaldiffracting portions 131 a, 131 b, 13 a, 13 b are delineated to a depthwhere the phase difference exposure laser light transmitted to thesurface of the mask substrate 1 reaches 90 degrees.

(d) As shown in FIG. 19, remove the second resist film 18 is removedwith a removal agent. Afterward, the mask substrate 1 is coated with athird resist film 28 by the spin coater, and third openings 37 a, 37 bare delineated using the photolithography process, as shown in FIG. 20.

(e) Further the mask substrate 1 is selectively etched from theasymmetrical diffracting portions 131 a, 131 b exhibited by the thirdopenings 37 a, 37 b with isotropic etching process, using the thirdresist film 28 as a mask, and symmetrical diffracting portions 23 a, 23b are delineated. In this process, the symmetrical diffracting portions23 a, 23 b are delineated to a depth where the phase difference ofexposure laser light transmitted to the surface of the mask substrate 1reaches 180 degrees. Although it is acceptable to further etch using theanisotropic etching process, but if the isotropic etching process isused for the etching in the sidewall direction, as shown in FIG. 21,dimensional precision of the projected image by the manufactured reticleis improved.

(f) Finally, the third resist film 28 is removed with a removal agent.As shown in FIG. 22, both the device pattern 15 a that includes thelight shielding masks 7 a through 7 d, and the symmetrical diffractingportions 23 a, 23 b, and the asymmetrical diffraction grating 22 a thatincludes the light shielding bands 70 a, 7 b and the asymmetricaldiffracting portions 13 a, 13 b are formed on the mask substrate 1. Thuscompleting the reticle according to the embodiment.

It has been difficult to establish both an asymmetrical diffractingportion and a diffracting portion having differing phases together onthe same mask substrate. Therefore, it is necessary to prepare twomasks, one for the test reticle that includes an asymmetricaldiffraction grating, and one for the production reticle that includes adevice pattern. However, on the manufacturing method put forth above, inthe process shown from FIGS. 17 to 18, after each of the asymmetricaldiffracting portions 131 a, 131 b, 13 a, 13 b have been delineated byan-isotropic etching to a depth at which phase difference of theexposure laser light transmitted to the surface of the mask substrate 1reaches 90 degrees, the second resist film 18 still remaining after thean-isotropic etching is removed by a removal agent, in the process shownin FIG. 19. Next, as shown in FIG. 20, the third resist film 28 isformed, and the asymmetrical diffracting portions 131 a, 131 b arefurther etched with isotropic etching to a depth at which the phasedifference of the exposure laser light transmitted to the surface of themask substrate 1 reaches 180 degrees, and the symmetrical diffractingportions 23 a, 23 b are formed. According to such manufacturing method,it is possible to form both diffraction patterns having differentexposure laser light phase differences, such as the device pattern andthe asymmetrical diffraction grating, on the mask substrate 1 with ahigh level of precision. Also, the contrast of the projection image isimproved if the resist is exposed with a reticle that possessessymmetrical diffracting portions that have been partly etched to thelower regions of the light shielding masks. As in the afore mentionedmanufacturing method, if the mask substrate 1 is further etched from theasymmetrical diffracting portions 131 a, 131 b shown in FIG. 18 withisotropic etching after the asymmetrical diffracting portions 131 a, 131b have been delineated with an-isotropic etching, it is possible to formthe symmetrical diffracting portions 23 a, 23 b that have been partlyetched to the lower regions of the light shielding masks 7 b through 7 eshown in FIG. 22, with a high level of precision.

(First Modification of the Embodiment)

FIG. 23 is a cross section view of the asymmetrical diffraction gratingof the reticle according to a first modification of the embodiment.Differing from the asymmetrical diffracting portions 13 a, 13 b, 13 cshown in FIG. 5, asymmetrical diffracting portions 93 a. 93 b, 93 c, . .. , and U-type asymmetrical diffracting portions 94 a, 94 b, 94 c, . . .are established alternately. Other structural aspects are similar tothose of the asymmetrical diffraction grating shown in FIG. 5 sodescription thereof is omitted.

Here the asymmetrical diffracting portions 93 a, 93 b, 93 c, . . . , andthe U-type asymmetrical diffracting portions 94 a, 94 b, 94 c, . . . areall grooves established in the inside the mask substrate 1 near thesurface, and are all delineated at a depth where the phase differenceexposure laser light transmitted to the surface of the mask substrate 1reaches 105 degrees. The U-type asymmetrical diffracting portions 94 a,94 b, 94 c, . . . are all delineated at a depth where the phasedifference exposure laser light transmitted to the surface of the masksubstrate 1 reaches 75 degrees. For instance, the mask substrate 1 iscomposed of a substance such as fused silica glass for instance, whichpossesses a refraction index of 1.56, and in a case exposing with anargon fluoride (ArF) excimer laser having a wavelength of 193 nm, theasymmetrical diffracting portions 93 a, 93 b, 93 c, . . . , all havedepths of 100.5 nm, the U-type asymmetrical diffracting portions 94 a,94 b, 94 c, . . . , all have depths of 71.8 nm. It is possible toinspect the optical system 140 shown in FIG. 1 using the apparatus formonitoring optical system shown in FIG. 9 and the method for monitoringthe optical system shown in FIGS. 10 and 11 even in instances ofexposure using a reduction projection exposure device shown in FIG. 1having a reticle 5 that includes an asymmetrical diffraction gratingshown in FIG. 23, because the optical axis intersecting points of thewafer 31 and the projection image positions of the asymmetricaldiffraction grating possess a linear relationship.

Next, a method for manufacturing the reticle that includes theasymmetrical diffraction grating shown in FIG. 3 will be described usingthe FIGS. 24 through 28.

(a) The light shielding masks 7 a through 7 d and light shielding bands70 a, 70 b on the surface of the mask substrate 1 are formed using themethod put forth in FIGS. 15 and 16. Further, the second resist film 18,which possesses each of second openings 36 a, 36 b, and a second opening38, are formed on the surface of the mask substrate 1, as shown in FIG.24. The mask substrate 1 is composed of a substance such as fused silicaglass, and the light shielding masks and bands are composed of asubstance such as chromium.

(b) The sections of mask substrate 1 that are exhibited by the secondopenings 36 a, 36 b, 38 are selectively etched with anisotropic etching,then each of asymmetrical diffracting portions 231 a, 231 b, 93 aredelineated as shown in FIG. 25. Each of the asymmetrical diffractingportions 231 a, 231 b, 93 are delineated to a depth at that the phasedifference of the exposure laser light transmitted to the surface of themask substrate 1 reaches 105 degrees.

(c) After removing the second resist film 18 with a removal agent asshown in FIG. 26, and the third resist film 28 is coated onto thesurface of the mask substrate 1 by the spin coater, as shown in FIG. 27.Third openings 63 a, 63 b, and a third opening 64 are delineated usingthe photolithography process.

(d) The sections of mask substrate 1 that are exhibited by the thirdopenings 63 a, 63 b, 64 are selectively etched with isotropic etching.Consequently, each of the symmetrical diffracting portions 23 a, 23 b,and the asymmetrical diffracting portion 94 are delineated as shown inFIG. 28. In this process, each of the symmetrical diffracting portions23 a, 23 b are delineated to a depth at that the phase difference of theexposure laser light transmitted to the surface of the mask substrate 1reaches 180 degrees, and the asymmetrical diffracting portion 94 isdelineated to a depth at that the phase difference of the exposure laserlight transmitted to the surface of the mask substrate 1 reaches 75degrees.

(e) Finally, the third resist film 28 is removed with a removal agent,thus completing the reticle that includes both the device patterns andthe asymmetrical diffraction grating established on the surface of themask substrate 1, as shown in FIG. 29. The device patterns include lightshielding masks 7 a through 7 d and symmetrical diffracting portions 23aand 23 b. The asymmetrical diffraction grating includes theasymmetrical diffracting portions 93, 94 and the light shielding band 70a, 70 b

(Second Modification of the Embodiment)

FIG. 30 is a cross sectional view of the asymmetrical diffractiongrating of the reticle according to a second modification of theembodiment of the present invention. Unlike the asymmetrical diffractingportions 13 a, 13 b, 13 c, . . . shown in FIG. 5, staircase diffractingportions 86 a, 86 b, 86 c, are established. Each of the staircasediffracting portions 86 a, 86 b, 86 c, . . . includes a section thatdescends in a staircase-like fashion. Other structural aspects aresimilar to the asymmetrical diffraction grating shown in FIG. 5 sodescription thereof is omitted.

Here, the step-like regions of the staircase diffracting portion 86 ainclude a phase difference transparent face 100 a, phase differencetransparent face 101 a, and a equiphase transparent face 102 a. Thephase difference transparent face 100 a is disposed at a depth where thephase difference of the exposure laser light transmitted to the surfaceof the mask substrate 1 reaches 60 degrees, the phase differencetransparent face 101 a is disposed at a depth where the phase differenceof the exposure laser light transmitted to the surface of the masksubstrate 1 reaches 120 degrees, and the equiphase transparent face 102a is disposed at a depth where the phase difference of the exposurelaser light transmitted to the surface of the mask substrate 1 reaches180 degrees. Therefore, in an instance exposing with an argon fluoride(ArF) excimer laser having a wavelength of 193 nm, the phase differencetransparent face 100 a is disposed in a depth of 57.4 nm, the phasedifference transparent face 101 a is disposed in a depth of 114.9 nm,and the equiphase transparent face 102 a is disposed in a depth of 172.3nm, from the surface of the mask substrate 1, which is composed of fusedsilica glass and has a refraction index of 1.56. The other staircasediffracting portions 86 b, 86 c, . . . , each identical in arrangement,possess the phase difference transparent faces 100 b, 100 c, . . . ,phase difference transparent faces 101 b, 100 c, . . . , and equiphasetransparent faces 102 b, 102 c, . . . It is possible to inspect theoptical system shown in FIG. 1 using the apparatus for monitoringoptical system shown in FIG. 9 or the method for monitoring the opticalsystem shown in FIGS. 10 and 11 even in instances exposing by furnishingthe reduced projection exposure device shown in FIG. 1 with the reticle5 that includes the asymmetrical diffraction grating shown in FIG. 30,because of the linear relationship that the optical axis intersectingpoints of the wafer 31 and the projection image positions of theasymmetrical diffraction grating possess.

Next, a method for manufacturing the reticle that includes theasymmetrical diffraction grating shown in FIG. 30 will be describedusing FIGS. 31 through 35.

(a) With the manufacturing method appearing in FIGS. 15 through 17, thelight shielding masks 7 a through 7 d, the light shielding bands 70 a,70 b, and the second resist film 18 having second openings 36 a, 36 b,and second openings 58 a, 58 b are formed as shown in FIG. 31.

(b) The sections of mask substrate 1 that are exhibited by the secondopenings 36 a, 36 b, 58 a, 58 b are selectively etched with anisotropicetching, then the asymmetrical diffracting portions 29 a, 29 b, 30 a, 30b are delineated as shown in FIG. 32. The asymmetrical diffractingportions 29 a, 29 b, 30 a, 30 b are delineated to a depth at which thephase difference of the exposure laser light transmitted to the surfaceof the mask substrate 1 reaches 120 degrees.

(c) After using a removal agent to remove the second resist film 18, thethird resist film 48 coated onto the surface of the mask substrate 1 bythe spin coater, and third openings 97 a, 97 b, 98 a, 98 b, 99 a, 99 bare delineated.

(d) Finally, after selectively etching the sections of mask substrate 1that are exhibited by the third openings 97 a, 97 b, 98 a, 98 b, 99 a,99 b with isotropic etching, the third resist film 48 is removed byusing the removal agent. Thus, fabrication of the reticle that includesa device pattern and an asymmetrical diffraction grating on the masksubstrate 1 is completed, as shown in FIG. 35. The device patternincludes the light shielding masks 7 a through 7 d and the symmetricaldiffracting portions 23 a, 23 b. The asymmetrical diffraction gratingincludes the light shielding bands 70 a, 70 b and staircase diffractingportions 86 a, 86 b.

(Third Modification of the Embodiment)

The reduction projection exposure device according to a thirdmodification of the embodiment adds to the structural aspects of thereduction projection exposure device shown in FIG. 12 by including ainspection optical system having a inspecting laser oscillator 65 a, areflection mirror 68 a, a beam splitter 67 a, and a TTL sensor 66 a. Thereflection mirror 68 a guides the laser emitted by the inspecting laseroscillator 65 a to the test pattern 20 a and alignment mark 26 a of thereticle 5. The beam splitter 67 a is disposed below the reticle 5 andsplits the emitted laser light. The TTL sensor 66 a receives the laserlight split by the beam splitter 67 a.

The laser emitted from the inspecting laser oscillator 65 a has awavelength that is outside of the sensitivity range of the resistcoating on the wafer 31, it is guided by the reflection mirror 68 a tothe test pattern 20 a and alignment mark 26 a of the reticle. The lasertransmitted through the test pattern 20 a and alignment mark 26 a passesthrough the beam splitter 67 a and the projection optical system 42 andis irradiated upon the surface of the wafer 31. The projected images ofthe test pattern 20 a and the alignment mark 26 a on the surface of thewafer 31 pass through the projection optical system 42 and the beamsplitter 67 a and are sensed by the TTL sensor 66 a.

In the same manner, a inspecting optical system including a inspectinglaser oscillator 65 b, a reflection mirror 68 b, a beam splitter 67 b,and a TTL sensor 66 b is disposed for the test pattern 20 b and thealignment mark 26 b as well. Likewise, a inspecting optical systemincluding a inspecting laser oscillator 65 c, a reflection mirror 68 c,a beam splitter 67 c, and a TTL sensor 66 c is disposed for the testpattern 20 c and the alignment mark 26 c as well. Other structuralaspects are similar to those of the reduction projection exposure deviceshown in FIG. 1 so description thereof is omitted.

If the reticle 5 and the inspecting optical system are used in thismanner, it becomes possible to observe each of the projection images ofthe test patterns 20 a, 20 b, 20 c while the wafer 31 is disposed on thereduction projection exposure device. This is because it is unnecessaryto develop the wafer 31 after exposure in order to carry out observationof the test patterns 20 a, 20 b, 20 c. Therefore it becomes possible toinspect and correct the optical system 140 of the reduction projectionexposure device shown in FIG. 36 using the apparatus for monitoringoptical system shown in FIG. 9 and the method for monitoring the opticalsystem shown in FIGS. 10 and 11, without having to exchange the wafer31. Also, because the alignment marks 26 a, 26 b, 26 c are eachestablished adjacent one of the test patterns 20 a, 20 b, 20 c, it ispossible to simultaneously align the positioning of the horizontal planeof the wafer 31.

(Fourth Modification of the Embodiment)

FIG. 37 is a plan view of the asymmetrical diffraction grating of thereticle according to a fourth modification of the embodiment, FIG. 38 isa cross sectional view from the I-I line in FIG. 37. The asymmetricaldiffraction grating according to the fourth modification of theembodiment includes light shielding bands 71 a, 71 b, 71 c, 71 d, 71 e,71 f, . . . , that all sandwich in each of asymmetrical diffractingportions 83 a, 83 b, 83 c, . . . as shown in FIGS. 37 and 38.

The asymmetrical diffracting portions 83 a, 83 b, 83 c, . . . here areall grooves established inside of the mask substrate 1 near the topsurface, at a depth where the phase difference of the exposure laserlight transmitted to the surface of the mask substrate 1 is a multipleof value that is greater than 0 degrees and less than 180 degrees. Forinstance, the asymmetrical diffracting portions 83 a, 83 b, 83 c, . . ., are established at a depth at which the phase difference of theexposure laser light transmitted to the surface of the mask substrate 1reaches 90 degrees. The constitution of the reticle according to thefourth modification of the embodiment, which includes an asymmetricaldiffraction grating in this manner, is identical to the reticle 5 shownin FIG. 2 and so description thereof is omitted.

The following instance is introduced for the sake of description: thereticle 5 that includes the asymmetrical diffraction grating shown inFIGS. 37 and 38 is disposed on the reduction projection exposure deviceshown in FIG. 1. A wafer 31 composed of a silicon substrate and coatedwith a resist film is exposed with an argon fluoride (ArF) excimer laserhaving a wavelength of 193 nm, and subsequently developed. Theprojection image of the above mentioned asymmetrical diffraction gratingincludes light shielding band projection images 104 a, 104 b, 104 c, 104d, 104 e, 104 f, substrate surface projection images 95 a, 95 b, 95 c, .. . , and asymmetrical diffracting portion projection images 96 a, 96 b,96 c, . . . The light shielding band projection images 104 a, 104 b, 104c, 104 d, 104 e, 104 f belong to the light shielding bands 71 a, 71 b,71 c, 71 d, 71 e, 71 f, . . . , and are disposed in a way as to besandwiched by the substrate surface projection images 95 a, 95 b, 95 c,. . . , which belong to the surface of the mask substrate 1. Theasymmetrical diffracting portion projection images 96 a, 96 b, 96 c, . .. , belong to the asymmetrical diffracting portions 83 a, 83 b, 83 c,

In observing the projection images shown in FIG. 39 under the SEM, theAFM or the like, the attained light shielding band projection images 104a, 104 b, 104 c, 104 d, 104 e, 104 f have a width represented by L, thesubstrate surface projection images 95 a, 95 b, 95 c, . . . , have awidth represented by S1, and the asymmetrical diffracting portionprojection images 96 a, 96 b, 96 c, . . . , have a width represented byS2. In this instance, there are two conditions which express the amountof exposure: exposure A, and an exposure B, which has 1.5 times theintensity of the exposure A. FIG. 40 is a graph plotting the measurementof L+S2 when the wafer stage 32 of the reduction projection exposuredevice shown in FIG. 1 is moved in the optical axis direction under thetwo exposure amount conditions A and B.

There is a substantially linear relationship between the amount ofchange in the length of L+S2 and the amount of the movement of the wafer31 toward the optical axis, as shown in FIG. 40. Also, the value of thelength of L+S2 undergoes no real change for the most part in switchingthe exposure from A to B. On one hand, as shown in FIG. 41, the lengthof L alone does not change very much in the fixed exposure condition ofwhen the wafer 31 is moved from the focal point to −200 nm to +200 nm.However, the length of L does show some change when the wafer 31 is in afixed position and the exposure is changed from A to B.

As shown above, if the wafer 31 is exposed with the reduction projectionexposure device shown in FIG. 1 having the reticle 5 that includes theasymmetrical diffraction grating shown in FIGS. 37 to 38, it becomespossible to calculate how much the wafer 31 has deviated from the focalpoint in the direction of the optical axis, without depending on theexposure amount. This becomes possible by observing the projection imageof the wafer 31. Furthermore, detection is even possible in instanceswhere there occurs a change in the exposure amount on a reductionprojection exposure device as shown in FIG. 41.

Next, an apparatus for monitoring optical system according to the fourthmodification of the embodiment is shown in FIG. 42. The part of a CPU400 that differs with the CPU 300 of the apparatus for monitoringoptical system shown in FIG. 9 is that the CPU 400 further includes anexposure information extractor 314. And different from the opticalsystem corrector 315, an optical system corrector 415 further includes aline width judgment module 305. An optical information memory 435differs from the optical information memory 335 by further including aline width storage portion 321. Other structural aspects are identicalto those of the apparatus for monitoring optical system shown in FIG. 9and so description thereof is omitted.

Here the exposure information extractor 314 extracts a line width L ofthe light shielding band projection images 104 a, 104 b, 104 c, 104 d,104 e, 104 f at the optimum exposure amount as the optimum line widthvalue of L, from image information of a projection image shown in FIG.39. The line width storage portion 321 stores the optimum line widthvalue of L extracted by the exposure information extractor 314. The linewidth judgment module 305 compares the optimum line width value with theactual measured values of the line width of L that is measured at thewafer to be inspected and input by the input device 312. The line widthjudgment module 305 then judges whether or not a change of the exposurehas occurred on the reduction projection exposure device shown in FIG.1.

By disposing the reticle 5 includes an asymmetrical diffraction gratingshown in FIGS. 37 and 38 on the reduction projection exposure deviceshown in FIG. 1, and using the apparatus for monitoring optical systemshown in FIG. 42, it becomes possible to inspect for aberration andfocal point deviation on the optical system 140, and it also becomespossible to inspect for changes in the exposure.

Next, a method for monitoring the optical system so as to inspect thechanges in the exposure of the exposure device shown in FIG. 1 usingFIGS. 1, 39, 42, 43.

(a) In a step S101 on FIG. 43, the wafer 31 is exposed with thereduction projection exposure device shown in FIG. 1 and the reticle 5having the test patterns 20 a through 20 c at the optimum exposure.After exposing and developing the wafer 31, image information of theprojection image of the wafer 31 as shown in FIG. 39 observed under theSEM, or the AFM is input from the input device 312 shown in FIG. 42 tothe projection image information extractor 425.

(b) In a step S152 of FIG. 43, the exposure information extractor 314 ofthe projection image information extractor 425 shown in FIG. 42 extractsthe line widths of the light shielding band projection images 104 a, 104b, 104 c, 104 d, 104 e, 104 f shown in FIG. 39 as the optimum line widthvalue, from the image information.

(c) In a step S102 of FIG. 43, the optimum line width value extracted inthe step S152 is stored in the line width storage portion 321 shown inFIG. 42 along with the information of the optical axis intersectingpoints of the wafer 31. In a step S170, the production of semiconductorintegrated circuitry begins at the reduction projection exposure deviceshown in FIG. 1.

(d) In the step S170, after semiconductor integrated circuitry has beenproduces on several lots, the optimum line width value stored by theline width storage portion 321 and the actual measured values of theline width input by the input device 312 are stored away at the linewidth judgment module 305 in a step S164 shown in FIG. 43. The linewidth judgment module 305 compares the optimum line width value and theactual measured values of the line width, and calculates the change inthe line width. In a step S103, the calibration information provider 315transmits the calculated change in the line width to the output device313, thus ending the test.

As shown above, the reticle 5 includes asymmetrical diffraction gratingsshown in FIGS. 37 and 38, and is disposed on the reduction projectionexposure device shown in FIG. 1. If the method for monitoring theoptical system shown in FIG. 43, and the apparatus for monitoringoptical system shown in FIG. 42 are used, it becomes possible to inspectwhether or not there occurs a change in the exposure on the reductionprojection exposure device shown in FIG. 1, on a semiconductorintegrated circuit production process. For instance, by observing theprojection images of an asymmetrical diffraction grating as shown inFIG. 39 at the beginning and the end of a semiconductor integratedcircuit production process, it becomes possible to recognize a decreasein the exposure on the reduction projection exposure device shown inFIG. 1, if the line width L of the light shielding band projectionimages 104 a, 104 b, 104 c, 104 d, 104 e, 104 f is observed to haveincreased.

Therefore, it becomes possible to focus in on problems occurring withthe reduction projection exposure device's exposure as a countermeasure.It also becomes possible to shorten maintenance-checking time that isused to preserve quality standards. Also, it is possible to establishthe asymmetrical diffraction grating according to the fourthmodification of the embodiment shown in FIGS. 37 and 38 on the same masksubstrate as both the device pattern and test pattern, as shown in FIG.2. This makes it unnecessary to exchange from the production reticle tothe test reticle that has been employed conventionally as maintenance.

Accordingly, if the production yield rates worsen, the wafer 31 can betested right where it is according to the methods shown in FIGS. 10, 11,and 43. It becomes possible to clearly verify whether or not aberrationis occurring on the optical system 140 of the reduction projectionexposure device shown in FIG. 1, whether or not the wafer 31 is disposedin a spot deviating from the focal point, or whether or not the exposureof the optical system 140 is falling. Further,. aside from optical basedobservation methods that might be used to observe the projection imageof the test pattern shown in FIG. 39, if the observation is limited tousing the SEM, or the AFM, it becomes possible to reduce the size of thetest pattern region on the reticle shown in FIGS. 37 and 38.

(Other Embodiments)

Although the invention has been described above by reference to theembodiment of the present invention, the present invention is notlimited to the embodiment described above. Modifications and variationsof the embodiment described above will occur to those skilled in theart, in the light of the above teachings.

For example, it is possible to inspect whether the wafer is located onthe focal point by measuring the difference between the line widths Siof the substrate surface projection images 95 a, 95 b, 95 c, . . . andthe line widths S2 of the asymmetrical diffracting portion projectionimages 96 a, 96 b, 96 c, . . . shown in FIG. 39.

As described above, the present invention includes many variations ofembodiments. Therefore, the scope of the invention is defined withreference to the following claims.

1. A reticle comprising: a mask substrate; a test pattern established onthe mask substrate having an asymmetrical diffraction grating so as togenerate positive first order diffracting light and negative first orderdiffracting light in different diffraction efficiencies; and a devicepattern adjacent to the test pattern established on the mask substrate.2. The reticle of claim 1, wherein the asymmetrical diffraction gratingcomprises: a plurality of light shielding bands disposed on the masksubstrate; and a plurality of asymmetrical diffracting portions adjacentto the light shielding bands established on the mask substrate so as togenerate phase difference of light reaching a multiple of value that islarger than 0 degrees and lower than 180 degrees.
 3. The reticle ofclaim 1, wherein the asymmetrical diffraction grating comprises: aplurality of light shielding bands disposed on the mask substrate; and aplurality of staircase diffracting portions adjacent to the lightshielding bands established on the mask substrate.
 4. The reticle ofclaim 3, wherein each of the staircase diffracting portions comprises: aplurality of equiphase transparent face disposed at a depth where thephase difference of light reaches a multiple of 180 degrees in the masksubstrate; and a plurality of phase difference transparent face disposedat a depth where the phase difference of the light reaches a multiple ofvalue that is larger than 0 degrees and lower than 180 degrees in themask substrate.
 5. The reticle of claim 1, wherein the asymmetricaldiffraction grating comprises: a plurality of asymmetrical diffractingportions established on the mask substrate so as to generate phasedifference of light that reaches a multiple of value that is larger than0 degrees and lower than 180 degrees; and a plurality of light shieldingbands disposed on both side of the asymmetrical diffracting portions. 6.The reticle of claim 1, wherein the device pattern comprises: aplurality of symmetrical diffracting portions established on the masksubstrate so as to generate phase difference of light that reaches amultiple of 180 degrees; and a plurality of light shielding masksdisposed on both side of the symmetrical diffracting portions.
 7. Anapparatus for monitoring an optical system comprising: a projectionimage information extractor configured to obtain image information of aprojection image by positive first order diffracting light and negativefirst order diffracting light in different diffraction efficiencies; anoptical information memory configured to store the image information;and a calibration information provider configured to provide calibrationinformation by using the image information so as to calibrate theoptical system.
 8. The apparatus of claim 7, wherein the projectionimage information extractor comprises approximate formula calculatorconfigured to calculate an approximate formula expressing linearrelation between a position of the projection image on a wafer and anoptical axis intersecting points of the wafer in the optical system byusing the image information.
 9. The apparatus of claim 7, wherein theoptical information memory comprises an approximate formula storageportion configured to store the approximate formula.
 10. The apparatusof claim 8, wherein the calibration information provider comprises anaberration calculator configured to calculate an aberration of theoptical system by using the approximate formula.
 11. The apparatus ofclaim 8, wherein the calibration information provider comprises adefocus calculator configured to calculate a calculated position of thewafer by using the approximate formula and a measured position of theprojection image.
 12. The apparatus of claim 11, wherein the opticalinformation memory comprises a focal point storage portion configured tostore a focal point of the optical system.
 13. The apparatus of claim12, wherein the calibration information provider comprises a defocusjudgment module configured to compare the calculated position and thefocal point.
 14. The apparatus of claim 7, wherein the projection imageinformation extractor comprises an exposure information extractorconfigured to extract an optimum line width of the projection image atan optimum exposure.
 15. The apparatus of claim 14, wherein the opticalinformation memory comprises a line width storage portion configured tostore the optimum line width.
 16. The apparatus of claim 15, wherein thecalibration information provider comprises a line width judgment moduleconfigured to compare the optimum line width and a measured line widthof the projection image.
 17. A method for monitoring an optical systemcomprising: obtaining image information of a projection image bypositive first order diffracting light and negative first orderdiffracting light in different diffraction efficiencies; and providingcalibration information by using the image information so as tocalibrate the optical system.
 18. The method of claim 17, furthercomprising calculating an approximate formula expressing linear relationbetween a position of the projection image on a wafer and an opticalaxis intersecting point on the wafer in the optical system by using theimage information.
 19. The method of claim 18, wherein the providing thecalibration information further comprises calculating an aberration ofthe optical system by using the approximate formula.
 20. The method ofclaim 18, wherein the providing the calibration information furthercomprises calculating a calculated position of the wafer by using theapproximate formula and a measured position of the projection image. 21.The method of claim 18, wherein the providing the calibrationinformation further comprises comparing the calculated position and afocal point of the optical system.
 22. The method of claim 17, furthercomprising extracting an optimum line width of the projection image atan optimum exposure.
 23. The method of claim 22, wherein providing thecalibration information further comprises comparing the optimum linewidth and a measured line width of the projection image so as to judge achange in the line width.
 24. A method for manufacturing a reticlecomprising: depositing a light shielding film on a mask substrate;coating a first resist film on the light shielding film and delineatingfirst openings in the first resist film; etching the light shieldingfilm exhibited by the first openings selectively; removing the firstresist film and coating a second resist film on the mask substrate anddelineating second openings in the second resist film; etching the masksubstrate exhibited by the second openings selectively and fabricating aplurality of asymmetrical diffracting portions that generate positivefirst order diffracting light and negative first order diffracting lightin different diffraction efficiencies; removing the second resist filmand coating a third resist film on the mask substrate and delineatingthe third openings in the third resist film; and etching the masksubstrate exhibited by the third openings selectively and fabricating aplurality of symmetrical diffracting portions that generate positivefirst order diffracting light and negative first order diffracting lightin equal diffraction efficiencies.
 25. The method of claim 24, afterfabricating the asymmetrical diffracting portions, further comprises anadditional etching of the mask substrate from sidewalls of theasymmetrical diffracting portions.